K7M403625M-QC80T by Samsung | Memory ICs

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Manufacturer	Samsung
Manufacturer's Part Number	K7M403625M-QC80T
Description	ZBT SRAM; Temperature Grade: COMMERCIAL; Maximum Standby Current: .03 Amp; Technology: CMOS; Moisture Sensitivity Level (MSL): 3; Parallel or Serial: PARALLEL;
Datasheet	K7M403625M-QC80T Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.03 Amp
Organization:	128KX36
Output Characteristics:	3-STATE
Sub-Category:	SRAMs
Maximum Supply Current:	300 mA
Terminal Finish:	TIN LEAD
Maximum Clock Frequency (fCLK):	100 MHz
No. of Words:	131072 words
Technology:	CMOS
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
Memory Density:	4718592 bit
Minimum Standby Voltage:	3.14 V
Memory IC Type:	ZBT SRAM
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
Memory Width:	36
Qualification:	Not Qualified
Maximum Access Time:	8 ns
No. of Words Code:	128K
Parallel or Serial:	PARALLEL
Temperature Grade:	COMMERCIAL
Power Supplies (V):	2.5/3.3,3.3

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