Samsung - K7P403623M-HC75T

K7P403623M-HC75T by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K7P403623M-HC75T
Description APPLICATION SPECIFIC SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 119; Package Code: BGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;
Datasheet K7P403623M-HC75T Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .06 Amp
Organization: 128KX36
Output Characteristics: 3-STATE
Sub-Category: SRAMs
Surface Mount: YES
Maximum Supply Current: 500 mA
No. of Terminals: 119
No. of Words: 131072 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
Technology: CMOS
JESD-30 Code: R-PBGA-B119
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 70 Cel
Package Code: BGA
Moisture Sensitivity Level (MSL): 1
Input/Output Type: COMMON
Memory Density: 4718592 bit
Minimum Standby Voltage: 3.15 V
Memory IC Type: APPLICATION SPECIFIC SRAM
Minimum Operating Temperature: 0 Cel
Memory Width: 36
Qualification: Not Qualified
Package Equivalence Code: BGA119,7X17,50
Maximum Access Time: 7.5 ns
No. of Words Code: 128K
Parallel or Serial: PARALLEL
Terminal Pitch: 1.27 mm
Temperature Grade: COMMERCIAL
Power Supplies (V): 2.5,3.3
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