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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K8A6415ETB-DE7B0 |
| Description | FLASH; Temperature Grade: OTHER; Package Code: BGA; Package Shape: UNSPECIFIED; Peak Reflow Temperature (C): 260; Maximum Access Time: 90 ns; |
| Datasheet | K8A6415ETB-DE7B0 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Organization: | 4MX16 |
| Programming Voltage (V): | 1.8 |
| Minimum Supply Voltage (Vsup): | 1.7 V |
| Surface Mount: | YES |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Words: | 4194304 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| Technology: | CMOS |
| JESD-30 Code: | X-PBGA-B |
| Package Shape: | UNSPECIFIED |
| Terminal Form: | BALL |
| Operating Mode: | ASYNCHRONOUS |
| Maximum Operating Temperature: | 85 Cel |
| Package Code: | BGA |
| Moisture Sensitivity Level (MSL): | 3 |
| Memory Density: | 67108864 bit |
| Memory IC Type: | FLASH |
| JESD-609 Code: | e1 |
| Minimum Operating Temperature: | -25 Cel |
| Memory Width: | 16 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Maximum Access Time: | 90 ns |
| No. of Words Code: | 4M |
| Nominal Supply Voltage / Vsup (V): | 1.8 |
| Additional Features: | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE |
| Peak Reflow Temperature (C): | 260 |
| Parallel or Serial: | PARALLEL |
| Temperature Grade: | OTHER |
| Maximum Supply Voltage (Vsup): | 1.95 V |
