
Image shown is a representation only.
Manufacturer | Samsung |
---|---|
Manufacturer's Part Number | K9WAG08U1M-IIB00 |
Description | FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm; |
Datasheet | K9WAG08U1M-IIB00 Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Organization: | 2GX8 |
Maximum Seated Height: | 1 mm |
Programming Voltage (V): | 2.7 |
Minimum Supply Voltage (Vsup): | 2.7 V |
Surface Mount: | YES |
No. of Terminals: | 52 |
No. of Words: | 2147483648 words |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY, VERY THIN PROFILE |
Technology: | CMOS |
JESD-30 Code: | R-PBGA-BU52 |
Package Shape: | RECTANGULAR |
Terminal Form: | BUTT |
Operating Mode: | ASYNCHRONOUS |
Maximum Operating Temperature: | 85 Cel |
Package Code: | VBGA |
Width: | 12 mm |
Moisture Sensitivity Level (MSL): | 3 |
Memory Density: | 17179869184 bit |
Memory IC Type: | FLASH |
Minimum Operating Temperature: | -40 Cel |
Memory Width: | 8 |
No. of Functions: | 1 |
Qualification: | Not Qualified |
Length: | 17 mm |
Maximum Access Time: | 20 ns |
No. of Words Code: | 2G |
Nominal Supply Voltage / Vsup (V): | 3.3 |
Additional Features: | CONTAINS ADDITIONAL 256M BIT SPARE NAND MEMORY |
Peak Reflow Temperature (C): | 260 |
Parallel or Serial: | PARALLEL |
Terminal Pitch: | 2 mm |
Temperature Grade: | INDUSTRIAL |
Maximum Supply Voltage (Vsup): | 3.6 V |