Samsung - KM6164000ALR5

  1. Home
  2. Samsung - KM6164000ALR5
KM6164000ALR5 by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number KM6164000ALR5
Description SRAMs;
Datasheet KM6164000ALR5 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

5962-8855202XA by Renesas Electronics

5962-8855202XA

Renesas Electronics

Renesas Electronics' 5962-8855202XA is a MIL-STD-883 compliant SRAM with 32KX8 organization, 70ns access time, and 262144-bit memory density. Ideal for military applications requiring a reliable, high-speed memory solution with common I/O type and 3-state output characteristics.
70V27L15PFGI8 by Integrated Device Technology

70V27L15PFGI8

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: QFP; Package Shape: SQUARE; Terminal Position: QUAD;
CY62158EV30LL-45BVXI by Cypress Semiconductor

CY62158EV30LL-45BVXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words: 1048576 words;
5962-8685920YA by Defense Logistics Agency

5962-8685920YA

Defense Logistics Agency

Defense Logistics Agency's 5962-8685920YA is a MILITARY-grade SRAM with 16KX4 organization, operating at 5V. Featuring CERAMIC package, RECTANGULAR shape, and ASYNCHRONOUS mode, it offers 55ns access time for applications requiring high reliability in extreme temperatures.
71V416S15PHGI8 by Integrated Device Technology

71V416S15PHGI8

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;
R1LP0408DSP-5SI#B1 by Renesas Electronics

R1LP0408DSP-5SI#B1

Renesas Electronics

Renesas Electronics R1LP0408DSP-5SI#B1 is a 512Kx8 SRAM with 55ns access time, operating at 5V. Ideal for industrial applications, it offers a memory density of 4Mbit and operates in parallel mode. The small outline package with gull wing terminals makes it suitable for surface mount designs.
AS7C34098A-12TCN by Alliance Semiconductor

AS7C34098A-12TCN

Alliance Semiconductor

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Input/Output Type: COMMON;
IDT71V67603S133PFGI by Renesas Electronics

IDT71V67603S133PFGI

Renesas Electronics

Renesas Electronics' IDT71V67603S133PFGI is a 256Kx36 CACHE SRAM with 4.2ns access time, operating at 3.3V. It features synchronous operation, 0.65mm terminal pitch, and industrial temperature grade suitability. Ideal for applications requiring fast memory access in compact spaces like networking equipment and industrial automation systems.
5962-8685916LA by Matra Mhs

5962-8685916LA

Matra Mhs

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 24; Package Shape: RECTANGULAR; Maximum Operating Temperature: 125 Cel; Package Style (Meter): IN-LINE;
IDT7005L20JGI by Renesas Electronics

IDT7005L20JGI

Renesas Electronics

The Renesas Electronics IDT7005L20JGI is an 8Kx8 CMOS SRAM with a memory density of 65536 bit. It operates asynchronously at a max access time of 20 ns and supports parallel communication. This multi-port SRAM chip, housed in a square chip carrier package, is ideal for industrial applications requiring fast and reliable memory storage.
DS1225Y-200IND by Maxim Integrated

DS1225Y-200IND

Maxim Integrated

DS1225Y-200IND by Maxim Integrated is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and consumes up to 85mA. Ideal for industrial applications requiring non-volatile memory storage in microelectronic assemblies.
CY7C1441KV33-133AXM by Cypress Semiconductor

CY7C1441KV33-133AXM

Cypress Semiconductor

CY7C1441KV33-133AXM by Cypress Semiconductor is a 1MX36 CACHE SRAM with synchronous operation and a supply voltage of 3.3V. It is used in military-grade applications, has a max operating temperature of 125°C, and offers fast access time of 6.5 ns.
23A1024-I/P by Microchip Technology

23A1024-I/P

Microchip Technology

Microchip Technology's 23A1024-I/P is a CMOS SRAM with 128KX8 organization, operating at 1.8/2V. It features synchronous operation, 20MHz clock frequency, and 131072 words capacity. Ideal for industrial applications requiring reliable memory storage in a compact IN-LINE package style.
CY14V101QS-SF108XIT by Infineon Technologies

CY14V101QS-SF108XIT

Infineon Technologies

CY14V101QS-SF108XIT by Infineon Technologies is a 128Kx8 non-volatile SRAM with synchronous operation. It operates at a voltage range of 2.7V to 3.6V and has an industrial temperature grade of -40°C to 85°C. This small outline package is suitable for applications requiring reliable memory storage in harsh environments.
IDT71V416S12PHG8 by Renesas Electronics

IDT71V416S12PHG8

Renesas Electronics

The Renesas Electronics IDT71V416S12PHG8 is a 256Kx16 SRAM with 3.3V supply, operating in asynchronous mode. It features a 12ns max access time and output enable function, suitable for applications requiring fast and reliable memory access such as networking equipment and industrial automation systems.
IS61LV25616AL-10TLI by Integrated Silicon Solution

IS61LV25616AL-10TLI

Integrated Silicon Solution

IS61LV25616AL-10TLI by Integrated Silicon Solution is a 256KX16 SRAM with 3.3V supply, operating at -40 to 85 °C. It features 10ns access time, 110mA max supply current, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in compact form factor.
5962-8685916LA by STMicroelectronics

5962-8685916LA

STMicroelectronics

STMicroelectronics' 5962-8685916LA is a MIL-STD-883 compliant SRAM with 16KX4 organization, operating in asynchronous mode at 5V. It features a memory density of 65536 bit, parallel interface, and max access time of 45 ns. Ideal for military applications requiring fast and reliable data storage.
DS1245Y-70 by Maxim Integrated

DS1245Y-70

Maxim Integrated

DS1245Y-70 by Maxim Integrated is a 128Kx8 SRAM with 1048576-bit memory density. It operates at 5V, has an access time of 70ns, and consumes up to 85mA. Ideal for commercial applications requiring non-volatile memory in microelectronic assemblies.
CY62167EV18LL-55BVXI by Cypress Semiconductor

CY62167EV18LL-55BVXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 1M;
74F189SJ by Texas Instruments

74F189SJ

Texas Instruments

74F189SJ by Texas Instruments is a 16x4 SRAM with a memory density of 64 bit. It operates asynchronously at a max access time of 27 ns and has a nominal voltage of 5V. This memory IC is commonly used in applications requiring fast and reliable data storage.