Samsung - KSA1150-O

  1. Home
  2. Samsung - KSA1150-O
KSA1150-O by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number KSA1150-O
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 70; Package Style (Meter): IN-LINE;
Datasheet KSA1150-O Datasheet
In Stock562
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 70
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
562 - -

Popular Products

Category Top Products

BC817-40 by Formosa Microsemi

BC817-40

Formosa Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
2N3906 by Samsung

2N3906

Samsung

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-25 by NXP Semiconductors

BC817-25

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
BC847C by Dc Components

BC847C

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
MMBT3906 by Good-ark Electronics

MMBT3906

Good-ark Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 300 ns;
MMBT2222A by Motorola

MMBT2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 35 ns;
2N2219A by Vishay Intertechnology

2N2219A

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Package Body Material: METAL; Qualification: Not Qualified;
BC807-40W,115 by NXP Semiconductors

BC807-40W,115

NXP Semiconductors

BC807-40W,115 by NXP Semiconductors is a PNP BJT transistor for switching applications. With a VCEsat of 0.7V and hFE of 250, it can handle up to 0.5A collector current. Operating at a max temperature of 150°C, this transistor has a transition frequency of 80MHz making it suitable for high-speed switching circuits.
BC817-25 by Siemens

BC817-25

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBT3904 by Yangzhou Yangjie Electronics

MMBT3904

Yangzhou Yangjie Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Moisture Sensitivity Level (MSL): 1;
ULN2003AID by Texas Instruments

ULN2003AID

Texas Instruments

ULN2003AID by Texas Instruments is a NPN transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and can handle a collector current of 0.5A. This complex transistor is used for switching applications in surface mount configurations.
MMBT2222A by Guangdong Kexin Industrial

MMBT2222A

Guangdong Kexin Industrial

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: PLASTIC/EPOXY;
2N3906 by New Jersey Semiconductor Products

2N3906

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 250 MHz; No. of Elements: 1; JESD-609 Code: e0; Transistor Element Material: SILICON;
BC847B by STMicroelectronics

BC847B

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2907A by Onsemi

2N2907A

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; JESD-30 Code: O-MBCY-W3;
2N3904 by Samsung

2N3904

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222ALT1 by Leshan Radio

MMBT2222ALT1

Leshan Radio

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
JANTX2N2222A by New England Semiconductor

JANTX2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222A by Silicon Transistor

JANTX2N2222A

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC846B by General Semiconductor

BC846B

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;