Samsung - KSA614-O

  1. Home
  2. Samsung - KSA614-O
KSA614-O by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number KSA614-O
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Terminal Position: SINGLE; Maximum Power Dissipation Ambient: 25 W;
Datasheet KSA614-O Datasheet
In Stock2,163
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 70
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 55 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum VCEsat: .5 V
Maximum Power Dissipation Ambient: 25 W
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,163 $0.228 $493.164

Popular Products

Category Top Products

MJE350 by SPC TECHNOLOGY/ MULTICOMP

MJE350

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;
TIP112 by Bourns

TIP112

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Package Body Material: PLASTIC/EPOXY; Maximum Collector-Emitter Voltage: 100 V;
TIP125 by Continental Device India

TIP125

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Peak Reflow Temperature (C): NOT SPECIFIED;
2N3055 by Tt Electronics Plc

2N3055

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 15 A; Case Connection: COLLECTOR;
JANTX2N3055 by Microchip Technology

JANTX2N3055

Microchip Technology

JANTX2N3055 by Microchip Tech is a NPN BJT transistor with max 70V VCE, 15A IC, and hFE of min 20. Ideal for switching applications in MIL-19500/407D standard, it has a metal package body and operates up to 200°C.
TIP41C by Microsemi

TIP41C

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
TIP115 by Bourns

TIP115

Bourns

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;
TIP35C by Onsemi

TIP35C

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP125 by Toshiba

TIP125

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
TIP50 by Taitron Components

TIP50

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
BD140-16 by NXP Semiconductors

BD140-16

NXP Semiconductors

BD140-16 by NXP Semiconductors is a PNP power BJT transistor with max VCEsat of 0.5V, hFE of 100, and IC of 1.5A. Ideal for amplifier applications, it has a max operating temp of 150°C and can handle up to 8W power dissipation in a flange mount package style.
TIP42A by Microsemi

TIP42A

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
TIP35C by Central Semiconductor

TIP35C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
BD138 by Crimson Semiconductor

BD138

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
JANTXV2N3055 by Microchip Technology

JANTXV2N3055

Microchip Technology

JANTXV2N3055 by Microchip Tech is a NPN BJT with 115W power dissipation, 70V max collector-emitter voltage, and 15A max collector current. Ideal for high-power applications in military electronics due to MIL-19500/407D standard compliance and flange mount package style.
TIP115 by Baneasa S A

TIP115

Baneasa S A

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; JEDEC-95 Code: TO-220AB; Terminal Form: THROUGH-HOLE;
MJE15035G by Onsemi

MJE15035G

Onsemi

MJE15035G by Onsemi is a PNP BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Operates at up to 150°C with a min DC current gain of 10 (hFE).
ULN2064B by Allegro MicroSystems

ULN2064B

Allegro MicroSystems

NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1.75 A; Package Style (Meter): IN-LINE; Additional Features: LOGIC LEVEL COMPATIBLE;
TIP120 by Samsung

TIP120

Samsung

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Position: SINGLE;
TIP31C by Texas Instruments

TIP31C

Texas Instruments

TIP31C by Texas Instruments is a NPN BJT transistor with 3A IC, 30W Pd, and 100V VCE. Ideal for switching applications due to its single configuration and high hFE of 10. Operates up to 150°C, featuring a rectangular package with through-hole terminals.