KSB1017-R by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	KSB1017-R
Description	PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 9 MHz; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 4 A;
Datasheet	KSB1017-R Datasheet
In Stock	616

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	9 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	4 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	25 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	25 W
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	80 V
Maximum VCEsat:	1.7 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
616	-	-

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