Samsung - KSB1149-G

KSB1149-G by Samsung

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Manufacturer Samsung
Manufacturer's Part Number KSB1149-G
Description PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; Case Connection: ISOLATED;
Datasheet KSB1149-G Datasheet
In Stock425
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
JEDEC-95 Code: TO-126
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 6000
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum VCEsat: 1.2 V
Maximum Power Dissipation Ambient: 15 W
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