Samsung - KSB810

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KSB810 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number KSB810
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .7 A;
Datasheet KSB810 Datasheet
In Stock238
NAME DESCRIPTION
Nominal Transition Frequency (fT): 160 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .7 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 35
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .35 W
Maximum Collector-Emitter Voltage: 25 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
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