Samsung - KSB811-G

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KSB811-G by Samsung

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Manufacturer Samsung
Manufacturer's Part Number KSB811-G
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 110 MHz; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;
Datasheet KSB811-G Datasheet
In Stock167
NAME DESCRIPTION
Nominal Transition Frequency (fT): 110 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 200
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 25 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
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