Samsung - KSD1273-Q

KSD1273-Q by Samsung

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Manufacturer Samsung
Manufacturer's Part Number KSD1273-Q
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
Datasheet KSD1273-Q Datasheet
In Stock814
NAME DESCRIPTION
Nominal Transition Frequency (fT): 30 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 40 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 40 W
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 500
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
Maximum VCEsat: 1 V
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