KSD1692-Y by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	KSD1692-Y
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 4000; No. of Elements: 1;
Datasheet	KSD1692-Y Datasheet
In Stock	901

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
JEDEC-95 Code:	TO-126
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	4000
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum VCEsat:	1.2 V
Maximum Power Dissipation Ambient:	15 W

Pricing (USD)

Qty.	Unit Price	Ext. Price
901	-	-

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