Samsung - KSD985-R

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

SMMBTA56LT1G by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 100, and max. power dissipation of 0.3W. Ideal for amplifier applications, it operates at up to 150°C, with VCE of 80V and IC of 0.5A. It comes in a small outline package with matte tin finish and AEC-Q101 reference standard compliance.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

The Onsemi MMBT2222A is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 40V, max collector current of 1A, and min DC current gain of 75. With a small outline package style and peak reflow temp of 260°C, it operates b/w -55 to 150°C efficiently.

BC817.40 by Central Semiconductor is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.5A. It has a min DC current gain of 250 and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low power dissipation and high frequency performance, such as amplifiers and switching circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Terminal Form: WIRE;

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;

BC846BW-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 200 and fast nominal transition frequency (fT) of 300MHz.

SMBTA42E6327HTSA1 by Infineon is a NPN BJT with max. VCE of 300V, IC of 0.5A, and hFE of 40. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and temp range up to 150°C. Its Gull Wing terminals make it suitable for surface mount designs.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

SMMBT4403LT1G by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.75V, hFE of 100, and IC of 0.6A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds up to 200MHz.

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V; No. of Elements: 1;

ULN2003AD by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications, it has a max VCE of 50V and comes in a small outline package style suitable for surface mount technology.

MMBT3906-TP by Micro Commercial Components is a PNP BJT transistor with hFE of 100. It has a max power dissipation of 0.3W and operates up to 150°C. Ideal for amplifier applications, this SMD transistor offers a transition frequency of 250MHz in a small outline package.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

BC547ATA by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.1A, ideal for switching applications. With a min DC current gain of 110 and max power dissipation of 0.625W, it operates at up to 150°C making it suitable for various electronic circuits in different industries. The package style is cylindrical with matte tin finish and through-hole terminals.

MMBT2907ALT3G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package and can handle up to 0.6A of collector current. The device operates at temperatures up to 150°C and features a turn-on time of 45ns.