KSD985-R by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	KSD985-R
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 150 Cel; Terminal Form: THROUGH-HOLE;
Datasheet	KSD985-R Datasheet
In Stock	2,214

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1.5 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-126
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	2000
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	60 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum VCEsat:	1.5 V
Maximum Power Dissipation Ambient:	10 W

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,214	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;

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Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;