Samsung - KSH122-TF

KSH122-TF by Samsung

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Manufacturer Samsung
Manufacturer's Part Number KSH122-TF
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Maximum Collector-Emitter Voltage: 100 V; Maximum VCEsat: 4 V;
Datasheet KSH122-TF Datasheet
In Stock2,295
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 8 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 200 pF
Maximum VCEsat: 4 V
Maximum Power Dissipation Ambient: 20 W
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Pricing (USD)

Qty. Unit Price Ext. Price
2,295 $0.200 $459.000

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