Samsung - KSK161-G

  1. Home
  2. Samsung - KSK161-G
KSK161-G by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number KSK161-G
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): .15 pF; Package Shape: RECTANGULAR; Terminal Position: SINGLE;
Datasheet KSK161-G Datasheet
In Stock270
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Maximum Feedback Capacitance (Crss): .15 pF
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: DEPLETION MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
270 - -

Popular Products

Category Top Products

934008990215 by NXP Semiconductors

934008990215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Package Shape: RECTANGULAR; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
BF992R-TAPE-7 by NXP Semiconductors

BF992R-TAPE-7

NXP Semiconductors

BF992R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate, depletion mode operation with a max DS breakdown voltage of 20V and operates in the very high frequency band. This surface-mount transistor ensures efficient performance with a compact design.
BF998R,215 by NXP Semiconductors

BF998R,215

NXP Semiconductors

NXP Semiconductors' BF998R,215 is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a 12V DS Breakdown Voltage and 0.03A Drain Current. With GULL WING terminals and ULTRA HIGH FREQUENCY capabilities, it's ideal for small outline designs in SOURCE connections.
2N5486RLRPG by Onsemi

2N5486RLRPG

Onsemi

2N5486RLRPG by Onsemi is an N-CHANNEL RF FET with a power gain of 10 dB, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 0.31 W and operates in DEPLETION MODE at up to 150 °C, featuring a JUNCTION technology and SILICON element material.
BF965 by NXP Semiconductors

BF965

NXP Semiconductors

BF965 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications, featuring a max operating temp of 150 °C and a min DS breakdown voltage of 20V. It operates in dual gate depletion mode and supports very high frequency bands. Its compact round package ensures efficient surface mounting.
NE3210S01-T1 by Nec Electronics

NE3210S01-T1

Nec Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 3 V; No. of Terminals: 4;
BF556AT/R by NXP Semiconductors

BF556AT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Operating Mode: DEPLETION MODE; JEDEC-95 Code: TO-236AB;
BF245ARLRP by Onsemi

BF245ARLRP

Onsemi

BF245ARLRP by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY BAND. This THROUGH-HOLE transistor has a max ID of 0.1A and comes in a CYLINDRICAL package shape.
934036550215 by NXP Semiconductors

934036550215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Case Connection: SOURCE; Transistor Element Material: SILICON; Qualification: Not Qualified;
BF998-TAPE-7 by NXP Semiconductors

BF998-TAPE-7

NXP Semiconductors

BF998-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 12V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate depletion mode. This compact surface mount transistor ensures reliable performance up to 150 °C.
NTE312 by Nte Electronics

NTE312

Nte Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: O-PBCY-W3; Qualification: Not Qualified;
BF513-TAPE-7 by NXP Semiconductors

BF513-TAPE-7

NXP Semiconductors

BF513-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 20V, operates in depletion mode, and supports very high frequencies. Its compact SO package ensures efficient surface mounting.
BF256ARLRE by Onsemi

BF256ARLRE

Onsemi

BF256ARLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring a SINGLE configuration, such as RF amplifiers and oscillators.
FLC057WG by Eudyna Devices

FLC057WG

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF966 by Motorola

MRF966

Motorola

MRF966 by Motorola is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DUAL GATE, DEPLETION MODE with ULTRA HIGH FREQUENCY BAND support. With a max power dissipation of 0.35W and operating temp up to 125°C, it's ideal for high-frequency signal amplification needs.
ATF-55143-BLK by Broadcom

ATF-55143-BLK

Broadcom

Broadcom ATF-55143-BLK is a N-CHANNEL FET with 15.5 dB Gp for AMPLIFIER applications in C BAND. It has 5V DS Breakdown Voltage, 0.1A ID, and operates at max 150 °C temp. Package: PLASTIC/EPOXY, Surface Mount, GULL WING terminals, and SMALL OUTLINE style.
2SK302-Y by Toshiba

2SK302-Y

Toshiba

Toshiba's 2SK302-Y is an N-CHANNEL RF FET with a built-in diode, ideal for amplifier applications. Operating in depletion mode, it offers a max drain current of 0.03A and very high frequency band performance. With a package style of small outline and GULL WING terminals, it can handle up to 125°C operating temperature.
934050320115 by NXP Semiconductors

934050320115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N5484ZL1 by Onsemi

2N5484ZL1

Onsemi

2N5484ZL1 by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a max ID of 0.03 A and Crss of 1 pF. This JUNCTION FET operates in the ULTRA HIGH FREQUENCY BAND with a CYLINDRICAL package shape.
BLF183XRS by NXP Semiconductors

BLF183XRS

NXP Semiconductors

RF Small Signal Field-Effect Transistors;