Samsung - KST10

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KST10 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number KST10
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector-Base Capacitance: .7 pF;
Datasheet KST10 Datasheet
In Stock762
NAME DESCRIPTION
Nominal Transition Frequency (fT): 650 MHz
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 60
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .35 W
Maximum Collector-Emitter Voltage: 25 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Collector-Base Capacitance: .7 pF
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