Samsung - KST812M4

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KST812M4 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number KST812M4
Description PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 90;
Datasheet KST812M4 Datasheet
In Stock452
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 90
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .35 W
Maximum Collector-Emitter Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
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