Samsung - M312L2828EUS-CB0

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M312L2828EUS-CB0 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number M312L2828EUS-CB0
Description CACHE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet M312L2828EUS-CB0 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 128MX72
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Surface Mount: NO
Maximum Supply Current: 5880 mA
Terminal Finish: MATTE TIN
No. of Terminals: 184
Maximum Clock Frequency (fCLK): 133 MHz
No. of Words: 134217728 words
Terminal Position: DUAL
Package Style (Meter): MICROELECTRONIC ASSEMBLY
Technology: CMOS
JESD-30 Code: R-PDMA-N184
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 70 Cel
Package Code: DIMM
Moisture Sensitivity Level (MSL): 1
Input/Output Type: COMMON
Memory Density: 9663676416 bit
Memory IC Type: CACHE DRAM MODULE
JESD-609 Code: e3
Minimum Operating Temperature: 0 Cel
Memory Width: 72
Qualification: Not Qualified
Package Equivalence Code: DIMM184
Refresh Cycles: 8192
Maximum Access Time: .75 ns
No. of Words Code: 128M
Nominal Supply Voltage / Vsup (V): 2.5
Terminal Pitch: 1.27 mm
Temperature Grade: COMMERCIAL
Power Supplies (V): 2.5
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