Samsung - M386AAK40B40-CRB/UC/WD

  1. Home
  2. Samsung - M386AAK40B40-CRB/UC/WD
M386AAK40B40-CRB/UC/WD by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number M386AAK40B40-CRB/UC/WD
Description DDR DRAM MODULE;
Datasheet M386AAK40B40-CRB/UC/WD Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

M471B5273DH0-CH9 by Samsung

M471B5273DH0-CH9

Samsung

Samsung M471B5273DH0-CH9 DDR DRAM Module features 512MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for applications requiring high-speed synchronous operation with a memory density of 34359738368 bit.
MT46H64M32LFMA-5IT:A by Micron Technology

MT46H64M32LFMA-5IT:A

Micron Technology

MT46H64M32LFMA-5IT:A by Micron Technology is a 64MX32 LPDDR1 DRAM with 67108864 words, 2147483648 bit memory density, and 32-bit memory width. Operating in industrial temperature range of -40 to 85 °C, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.
KVR1333D3S9/4GKC by Kingston Technology Company

KVR1333D3S9/4GKC

Kingston Technology Company

DDR DRAM MODULE;
MT53E512M32D1ZW-046AAT:B by Micron Technology

MT53E512M32D1ZW-046AAT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046AAT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT46H64M16LFBF-5IT:BTR by Micron Technology

MT46H64M16LFBF-5IT:BTR

Micron Technology

Micron Technology's MT46H64M16LFBF-5IT:BTR is a DDR1 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.
AS4C64M16D2A-25BCNTR by Alliance Memory

AS4C64M16D2A-25BCNTR

Alliance Memory

Alliance Memory's AS4C64M16D2A-25BCNTR is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
HY5DU573222FP-33 by Sk Hynix

HY5DU573222FP-33

Sk Hynix

SK Hynix's HY5DU573222FP-33 is a DDR1 DRAM with 8MX32 organization, operating at 300 MHz. It features 144 terminals in a low profile grid array package, suitable for applications requiring high-speed synchronous memory access and common I/O type. With a max clock frequency of 300 MHz and 268435456-bit memory density, it offers fast data processing capabilities for commercial-grade systems.
MT40A512M16LY-062E:E by Micron Technology

MT40A512M16LY-062E:E

Micron Technology

Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.
MT48LC4M32B2P-6AIT:L by Micron Technology

MT48LC4M32B2P-6AIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AIT:L is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access time, high memory density, and low power consumption.
IS42S16400J-7TL by Integrated Silicon Solution

IS42S16400J-7TL

Integrated Silicon Solution

IS42S16400J-7TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. Ideal for commercial applications requiring fast access time of 5.4 ns and memory density of 67108864 bits in a small outline package.
MSM5416273-50GS-K by Oki Electric Industry

MSM5416273-50GS-K

Oki Electric Industry

VIDEO DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 64; Package Code: SSOP; Package Shape: RECTANGULAR; Organization: 256KX16;
MT40A512M16LY-075:E by Micron Technology

MT40A512M16LY-075:E

Micron Technology

Micron Technology's MT40A512M16LY-075:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin profile devices.
IS42S16320F-7TL by Integrated Silicon Solution

IS42S16320F-7TL

Integrated Silicon Solution

IS42S16320F-7TL by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 143 MHz clock frequency. It operates at 3.3V, has 54 terminals, and supports common I/O type. Ideal for applications requiring fast memory access in commercial temperature environments.
IS43LQ16128A-062BLI by Integrated Silicon Solution

IS43LQ16128A-062BLI

Integrated Silicon Solution

IS43LQ16128A-062BLI by Integrated Silicon Solution is a 128MX16 LPDDR4 DRAM with 1600 MHz clock frequency. It operates in synchronous mode, has a memory density of 2147483648 bit, and supports multi-bank page burst access. Ideal for industrial applications requiring high-speed data processing and low power consumption.
K4H561638N-LCCC by Samsung

K4H561638N-LCCC

Samsung

Samsung's K4H561638N-LCCC DDR1 DRAM features 16MX16 organization, 200 MHz clock frequency, and 70°C max operating temp. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.
MT41J64M16JT-15EAAT:G by Micron Technology

MT41J64M16JT-15EAAT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EAAT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in automotive electronics and industrial control systems.
MT41K128M16JT-107IT:KTR by Micron Technology

MT41K128M16JT-107IT:KTR

Micron Technology

Micron Technology's MT41K128M16JT-107IT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 934.5 MHz clock frequency. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type.
MT47H128M16HG-3IT:A by Micron Technology

MT47H128M16HG-3IT:A

Micron Technology

Micron Technology's MT47H128M16HG-3IT:A is a DDR2 DRAM with 128MX16 organization, operating at 333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
S70KS1282GABHB030 by Cypress Semiconductor

S70KS1282GABHB030

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Maximum Supply Voltage (Vsup): 2 V;
KM416C256BJ-7 by Samsung

KM416C256BJ-7

Samsung

Samsung's KM416C256BJ-7 is a 256Kx16 DRAM with 70ns access time and 512 refresh cycles. It operates at 5V, has a small outline package style, and is ideal for fast page access applications in commercial temperature environments.