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Manufacturer | Samsung |
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Manufacturer's Part Number | M470T5267AH3-CE7 |
Description | DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR; |
Datasheet | M470T5267AH3-CE7 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Standby Current: | .24 Amp |
Organization: | 512MX64 |
Output Characteristics: | 3-STATE |
Sub-Category: | DRAMs |
Surface Mount: | NO |
Maximum Supply Current: | 3280 mA |
No. of Terminals: | 200 |
Maximum Clock Frequency (fCLK): | 400 MHz |
No. of Words: | 536870912 words |
Terminal Position: | DUAL |
Package Style (Meter): | MICROELECTRONIC ASSEMBLY |
Technology: | CMOS |
JESD-30 Code: | R-PDMA-N200 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Maximum Operating Temperature: | 95 Cel |
Package Code: | DIMM |
Moisture Sensitivity Level (MSL): | 3 |
Input/Output Type: | COMMON |
Memory Density: | 34359738368 bit |
Memory IC Type: | DDR DRAM MODULE |
Minimum Operating Temperature: | 0 Cel |
Memory Width: | 64 |
Qualification: | Not Qualified |
Package Equivalence Code: | DIMM200,24 |
Refresh Cycles: | 8192 |
Maximum Access Time: | .4 ns |
No. of Words Code: | 512M |
Nominal Supply Voltage / Vsup (V): | 1.8 |
Peak Reflow Temperature (C): | 260 |
Terminal Pitch: | .6 mm |
Temperature Grade: | OTHER |
Power Supplies (V): | 1.8 |