Samsung - M832G0115AP0-C70

Samsung M471A2K43BB1-CRC DDR DRAM Module features 2GX64 organization, 64-bit memory width, and 137.4 Gb memory density. Ideal for synchronous operation in applications requiring high-speed data processing and dual bank page burst access mode.

DDR4 DRAM MODULE;

Micron Technology's MT48LC16M16A2P-7EIT:D is a 16MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. Ideal for industrial applications, it offers a memory density of 268MB and supports common I/O type with self-refresh capability.

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Ports: 1; Terminal Position: BOTTOM;

MT48LC4M32B2B5-6A:L by Micron Technology is a 4MX32 Synchronous DRAM with a memory density of 134217728 bit. It operates at a voltage of 3.3V and has a max access time of 5.4 ns. This memory module is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.

NT5CC256M16EP-EKT by Nanya Technology is a DDR3L DRAM with 256MX16 organization and 4294967296 bit memory density. It operates at a voltage of 1.35V, has a temperature range of -40 to 95 °C, and is suitable for industrial applications.

Micron Technology's MT46H128M16LFB7-6IT:B is a DDR1 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.

Samsung's K4B2G0846D-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max operating temperature of 85°C.

NT5CC128M16JR-EK by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in devices like smartphones, tablets, and networking equipment.

Samsung's K4S561632J-UC75 is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices due to its small form factor, low power consumption, and fast access time of 5.4 ns.

MT46V32M16CV-5BIT:J by Micron Technology is a 32MX16 DDR1 DRAM with 536870912 bit memory density. It operates at 200 MHz clock frequency, has 3-STATE output characteristics, and supports FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring fast data processing and high memory capacity.

Samsung's K4T1G164QF-BCE7 DDR2 DRAM features 64MX16 organization, 400 MHz clock frequency, and 1073741824 bit memory density. Ideal for applications requiring high-speed data processing and storage in devices like computers and servers.

Infineon's S27KL0642GABHA023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type.

NT5CC256M16CP-DII by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

Samsung's K4H561638N-LCCC DDR1 DRAM features 16MX16 organization, 200 MHz clock frequency, and 70°C max operating temp. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.

IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.

Samsung's K4S641632K-UC75 is a 4MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability. Package style: small outline, thin profile, suitable for commercial temperature grade environments.

IS42S16320D-7TLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation and self-refresh capability. It operates at 3.3V, has a clock frequency of 143MHz, and is ideal for industrial applications requiring high-speed memory access.

Micron Technology's MT46H128M16LFDD-48IT:CTR is a 128MX16 LPDDR1 DRAM with 1.8V supply, operating at up to 208MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.

The Winbond Electronics W632GU6NB12I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.