Samsung - MB-SPAGB/AM

MB-SPAGB/AM by Samsung

Image shown is a representation only.

Manufacturer	Samsung
Manufacturer's Part Number	MB-SPAGB/AM
Description	Samsung; Product Line: Plus; Product Model: MB-SPAGB; Product Type: SDHC; Storage Capacity: 16 GB; Country of Origin: Korea;

MB-SPAGB/AM Technical Details

NAME	DESCRIPTION
Weight (Approximate):	2 g
Certifications & Standards:	FCC CE VCCI NATA
Product Name:	16GB SDHC Plus Class 6 Memory Card
Speed Class Rating:	Class 6
Brand Name:	Samsung
Thickness:	2.1 mm
Form Factor:	SDHC
Maximum Read Speed:	48 MB/s
Marketing Information:	Fast, high-capacity storage for photos and videos Shoot more, film more and store more media Enjoy high-speed read and write performance Protect your data with 4-Proof technology Trust in high-quality Samsung engineering
Number of Memory Cards:	1
Length:	32 mm
Product Type:	SDHC
Product Model:	MB-SPAGB
Features:	Water Proof, Magnet Proof, X-ray Proof, Temperature Proof
Storage Capacity:	16 GB
Width:	24 mm
Country of Origin:	Korea
Product Line:	Plus

Popular Products

1N4148

Comchip Technology

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAV99

Weitronic Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

2N7002

Central Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;

LM107H/883

Advanced Micro Devices

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;

ULN2803ADWG4

Texas Instruments

ULN2803ADWG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3V. Ideal for applications requiring sink current flow direction in a small outline package style.

FDV303N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;

2N2222A

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

IRLML6402TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;

2N2222A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;

2N2222A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;