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Manufacturer | Samsung |
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Manufacturer's Part Number | MD16R162GEG0-CN1 |
Description | RAMBUS DRAM MODULE; No. of Terminals: 232; Package Code: DIMM; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Maximum Standby Current: 1.606 Amp; |
Datasheet | MD16R162GEG0-CN1 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Standby Current: | 1.606 Amp |
Organization: | 128MX32 |
Output Characteristics: | 3-STATE |
Access Mode: | BLOCK ORIENTED PROTOCOL |
Minimum Supply Voltage (Vsup): | 2.37 V |
Sub-Category: | DRAMs |
Surface Mount: | NO |
Maximum Supply Current: | 3940 mA |
No. of Terminals: | 232 |
No. of Words: | 134217728 words |
Terminal Position: | DUAL |
Package Style (Meter): | MICROELECTRONIC ASSEMBLY |
Technology: | CMOS |
JESD-30 Code: | R-XDMA-N232 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | SYNCHRONOUS |
Package Code: | DIMM |
Input/Output Type: | COMMON |
No. of Ports: | 1 |
Memory Density: | 4294967296 bit |
Self Refresh: | YES |
Memory IC Type: | RAMBUS DRAM MODULE |
Memory Width: | 32 |
No. of Functions: | 1 |
Qualification: | Not Qualified |
Package Equivalence Code: | DIMM232,40 |
Refresh Cycles: | 16384 |
Maximum Access Time: | 32 ns |
No. of Words Code: | 128M |
Nominal Supply Voltage / Vsup (V): | 2.5 |
Additional Features: | SELF CONTAINED REFRESH |
Terminal Pitch: | 1 mm |
Maximum Supply Voltage (Vsup): | 2.63 V |
Power Supplies (V): | 1.8/2.5,2.5 |