MJD117-T1 by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	MJD117-T1
Description	PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 25 MHz; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;
Datasheet	MJD117-T1 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	25 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	200
No. of Terminals:	2
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	200 pF
Maximum VCEsat:	3 V
Maximum Power Dissipation Ambient:	20 W

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