MJD29C-T1 by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	MJD29C-T1
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 1 A; Package Style (Meter): SMALL OUTLINE;
Datasheet	MJD29C-T1 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	3 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	15
No. of Terminals:	2
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum VCEsat:	.7 V
Maximum Power Dissipation Ambient:	15 W

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