Samsung - MMBT5401-T1

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MMBT5401-T1 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number MMBT5401-T1
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
Datasheet MMBT5401-T1 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 50
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Collector-Base Capacitance: 6 pF
Maximum VCEsat: .5 V
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