Image shown is a representation only.
| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | MS18R1624AH0-CM9 |
| Description | RAMBUS DRAM MODULE; No. of Terminals: 160; Package Code: DIMM; Package Shape: RECTANGULAR; Power Supplies (V): 1.8/2.5,2.5; No. of Words: 67108864 words; |
| Datasheet | MS18R1624AH0-CM9 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Organization: | 64MX18 |
| Output Characteristics: | 3-STATE |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Access Mode: | BLOCK ORIENTED PROTOCOL |
| Minimum Supply Voltage (Vsup): | 2.37 V |
| Sub-Category: | DRAMs |
| Surface Mount: | NO |
| Maximum Supply Current: | 1529 mA |
| No. of Terminals: | 160 |
| Maximum Clock Frequency (fCLK): | 1066 MHz |
| No. of Words: | 67108864 words |
| Terminal Position: | DUAL |
| Package Style (Meter): | MICROELECTRONIC ASSEMBLY |
| Technology: | CMOS |
| JESD-30 Code: | R-XDMA-N160 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | SYNCHRONOUS |
| Package Code: | DIMM |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 1207959552 bit |
| Self Refresh: | YES |
| Memory IC Type: | RAMBUS DRAM MODULE |
| Memory Width: | 18 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | DIMM160,25 |
| Maximum Access Time: | 35 ns |
| No. of Words Code: | 64M |
| Nominal Supply Voltage / Vsup (V): | 2.5 |
| Additional Features: | SELF CONTAINED REFRESH |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Terminal Pitch: | .635 mm |
| Maximum Supply Voltage (Vsup): | 2.63 V |
| Power Supplies (V): | 1.8/2.5,2.5 |
