Samsung - MZ-76P4T0BW

Renesas Electronics AT45DB161E-SSHF-B is a 16Mx1 NOR type flash memory with 70MHz clock frequency, SPI serial bus, and 100000 write/erase cycles. It operates at -40 to 85°C, ideal for industrial applications requiring high endurance and low standby current of 0.00001A.

Micron Technology's PC28F256P33TFE is a 16Mx16 NOR flash memory with 3V nominal voltage. Operating in synchronous mode, it offers 16K and 64K sector sizes for industrial applications. With a max operating temperature of 85°C, this thin-profile grid array package has a parallel interface and supports common flash commands.

S25FL512SAGBHI210 by Infineon Technologies is a 64MX8 NOR type flash memory with 512753664 bit density. It operates at 3V, has a clock frequency of 133 MHz, and offers 100000 write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation in a compact GRID ARRAY package.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Seated Height: 1.75 mm;

AT45DB321E-SHFHC-T by Renesas Electronics is a 32MX1 flash memory with a memory density of 33554432 bits. It operates at a max clock frequency of 85 MHz and has a small outline package style. This memory IC is commonly used in industrial applications requiring high-speed data storage.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; JESD-609 Code: e3;

AT45DB041E-SHN-B by Renesas Electronics is a 4M NOR flash memory with SPI interface. It operates at 85MHz clock frequency, has 100K write/erase cycles endurance, and supports hardware/software write protection. Ideal for industrial applications requiring high-speed data storage in compact designs.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Minimum Data Retention Time: 20;

IS25LP256D-JLLE by Integrated Silicon Solution is a 32MX8 NOR flash memory with 133 MHz clock frequency. Operating at -40 to 105 °C, it offers 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact form factor.

S29GL064S80TFV030 by Infineon Technologies is an 8MX8 Flash Memory with 67108864 bit memory density and 80 ns max access time. It operates at a nominal voltage of 3V, suitable for industrial applications requiring fast and reliable data storage in a compact form factor. The package style is small outline, thin profile, shrink pitch, making it ideal for space-constrained designs that demand high-speed performance.

Micron Technology's MT25QL256ABA8ESF-0SITTR is a 32MX8 NOR flash memory with 268435456-bit density. Operating at 133 MHz, it offers 100000 Write/Erase Cycles endurance and SPI serial bus type for applications requiring high-speed data storage in compact devices.

W25Q128JVEIQ by Winbond Electronics is a 16MX8 NOR flash memory with 133 MHz clock frequency, SPI serial bus type. Operating at 3.3V, it offers 100000 write/erase cycles and industrial temperature grade suitability. Ideal for applications requiring high-speed data storage in compact devices.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: NICKEL PALLADIUM GOLD;

Spansion's S29GL01GS10DHI013 is a 128MX8 NOR flash memory with a package shape of square and a low profile grid array style. It operates asynchronously at a nominal voltage of 3V and has a temperature grade suitable for industrial applications. With a memory density of 1073741824 bit, it offers fast access time of 100 ns and supports data polling.

W25Q128FVSIG by Winbond Electronics is a NOR flash memory with 128Mx1 organization, SPI serial bus type, and 104 MHz clock frequency. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3.6V. Ideal for industrial applications requiring high endurance with 100000 write/erase cycles.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Power Supplies (V): 3/3.3;

Kingston's EMMC04G-M627-X02U is a Flash Memory with 4GX8 organization, MLC NAND technology, and 4294967296 words capacity. It features a plastic/epoxy body, grid array style, and asynchronous operation mode. Ideal for applications requiring high-density memory storage in compact devices like smartphones and tablets.

SST25VF512A-33-4C-SAE by Microchip Technology is a 512Kx1 NOR type Flash Memory with SPI serial bus, operating at 33MHz. It has 100000 write/erase cycles endurance and operates on 3.3V supply voltage. Ideal for applications requiring high-speed data transfer and low power consumption in commercial temperature grade environments.

S26KS512SDPBHI020 by Infineon Technologies is a 64MX8 Flash Memory with 536870912 bit memory density. Operating at 1.8V, it offers synchronous operation and has a max access time of 96ns. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package.