Samsung - SFI2955

SFI2955 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number SFI2955
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 49 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
Datasheet SFI2955 Datasheet
In Stock815
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 151 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 9.4 A
Maximum Pulsed Drain Current (IDM): 38 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 49 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 9.4 A
Maximum Drain-Source On Resistance: .3 ohm
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