SFI9Z24 by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	SFI9Z24
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 49 W; JESD-30 Code: R-PSIP-T3; Minimum DS Breakdown Voltage: 60 V;
Datasheet	SFI9Z24 Datasheet
In Stock	347

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	161 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	9.7 A
Maximum Pulsed Drain Current (IDM):	40 A
Sub-Category:	Other Transistors
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	49 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain Current (Abs) (ID):	9.7 A
Maximum Drain-Source On Resistance:	.28 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
347	-	-

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