Samsung - SFM9120

  1. Home
  2. Samsung - SFM9120
SFM9120 by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number SFM9120
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Maximum Drain Current (ID): 1.7 A; No. of Elements: 1;
Datasheet SFM9120 Datasheet
In Stock818
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 3.9 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 1.7 A
Maximum Drain Current (Abs) (ID): 1.7 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
818 - -

Popular Products

Category Top Products

2N3019 by Transistor & Electronic

2N3019

Transistor & Electronic

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
BD13910 by Jiangsu Changjiang Electronics Technology

BD13910

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 150 Cel;
MMBTA92 by Sinyork

MMBTA92

Sinyork

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;
3001 by Asi Semiconductor

3001

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Maximum Operating Temperature: 175 Cel;
MJE3055T by Unisonic Technologies

MJE3055T

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP127 by Forward International Electronics

TIP127

Forward International Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
BC548C by Synsemi

BC548C

Synsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT3904LT1 by Synsemi

MMBT3904LT1

Synsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
3003 by Acrian

3003

Acrian

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
TIP41C by Sinyork

TIP41C

Sinyork

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC846B by Vishay Intertechnology

BC846B

Vishay Intertechnology

Vishay Intertechnology's BC846B is an NPN transistor with a min hFE of 200 and max IC of 0.1A. With a fT of 100MHz, it can handle up to 0.3W power dissipation. Ideal for applications requiring high DC current gain and low collector current in surface mount configurations.
MPSA92 by Philips Semiconductors

MPSA92

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
BD243C by Iskra Semic Capacitors Industry

BD243C

Iskra Semic Capacitors Industry

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
2N3019 by Semiconductors

2N3019

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
BC846B by Plessey Semiconductors Discrete Components Div

BC846B

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BSS83PE6327 by Infineon Technologies

BSS83PE6327

Infineon Technologies

BSS83PE6327 by Infineon is a P-CHANNEL transistor with a max drain current of 0.33A and power dissipation of 0.36W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C. This surface-mount transistor utilizes metal-oxide semiconductor technology, making it ideal for various electronic circuits.
BC846B by Philips Semiconductors

BC846B

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
PMBT2222A by North American Philips Discrete Products Div

PMBT2222A

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;
TIP112 by Harris Semiconductor

TIP112

Harris Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
BC547C by Allegro MicroSystems

BC547C

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;