SSH10N80A by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	SSH10N80A
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 10 A; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE;
Datasheet	SSH10N80A Datasheet
In Stock	709

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	533 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	10 A
Maximum Pulsed Drain Current (IDM):	40 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	800 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.95 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
709	-	-

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