Samsung - SSH6N80AS

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SSH6N80AS by Samsung

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Manufacturer Samsung
Manufacturer's Part Number SSH6N80AS
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
Datasheet SSH6N80AS Datasheet
In Stock536
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 480 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 24 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 800 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 200 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 6 A
Maximum Drain-Source On Resistance: 2 ohm
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