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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | SSP4N80AS |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 3; No. of Elements: 1; |
| Datasheet | SSP4N80AS Datasheet |
| In Stock | 785 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Turn On Time (ton): | 125 ns |
| Maximum Drain Current (ID): | 4.5 A |
| Maximum Pulsed Drain Current (IDM): | 18 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 130 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| Maximum Turn Off Time (toff): | 220 ns |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | 130 W |
| Maximum Drain-Source On Resistance: | 3 ohm |
| Avalanche Energy Rating (EAS): | 324 mJ |
| Maximum Feedback Capacitance (Crss): | 42 pF |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 800 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 4.5 A |
