Sanyo Semiconductor - SVC236-TB-E

  1. Home
  2. Sanyo Semiconductor - SVC236-TB-E
SVC236-TB-E by Sanyo Semiconductor

Image shown is a representation only.

Manufacturer Sanyo Semiconductor
Manufacturer's Part Number SVC236-TB-E
Description VARIABLE CAPACITANCE DIODE; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet SVC236-TB-E Datasheet
In Stock801
NAME DESCRIPTION
Diode Element Material: SILICON
Maximum Time At Peak Reflow Temperature (s): 30
Diode Type: VARIABLE CAPACITANCE DIODE
Peak Reflow Temperature (C): 260
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
801 - -

Popular Products

Category Top Products

SVC251SPA by Onsemi

SVC251SPA

Onsemi

SVC251SPA by Onsemi is a single hyperabrupt varactor diode with 23pF nominal capacitance, 12V breakdown voltage, and 1.7 min capacitance ratio. It is used in RF applications for frequency tuning due to its silicon element material and through-hole terminal form.
MDX590C by Texas Instruments

MDX590C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 15; Nominal Diode Capacitance: .45 pF;
BB152 by NXP Semiconductors

BB152

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4796 by Onsemi

1N4796

Onsemi

1N4796 by Onsemi is a varactor diode with a min quality factor of 15, max reverse current of 0.005 uA, and nominal capacitance of 47 pF. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.
BBY42T/R by NXP Semiconductors

BBY42T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMV1430-040LF by Skyworks Solutions

SMV1430-040LF

Skyworks Solutions

SMV1430-040LF by Skyworks Solutions is a varactor diode with silicon diode element. It has 2 terminals in a rectangular chip carrier package style for surface mount applications. With variable capacitance, it can withstand peak reflow temperature of 260°C, making it ideal for RF tuning circuits.
BB910143 by NXP Semiconductors

BB910143

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB164 by NXP Semiconductors

BB164

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB659C02VH7902XTSA1 by Infineon Technologies

BB659C02VH7902XTSA1

Infineon Technologies

Infineon's BB659C02VH7902XTSA1 is a single varactor diode with 39pF capacitance, 35V breakdown voltage, and 9.5 min capacitance ratio. Ideal for very high frequency applications, it operates b/w -55°C to 150°C in small outline SMD package.
MMVL809T1 by Onsemi

MMVL809T1

Onsemi

MMVL809T1 by Onsemi is a varactor diode with 5.3pF capacitance, 20V breakdown voltage, and 0.2W power dissipation. Ideal for ultra high frequency applications, it features a small outline package and Gull Wing terminals for surface mount assembly.
1N5463 by Onsemi

1N5463

Onsemi

1N5463 by Onsemi is a varactor diode with 10pF nominal capacitance, abrupt variable capacitance classification, and 30V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 550 and low reverse current of 0.00000002uA.
BB179BT/R by NXP Semiconductors

BB179BT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB182,315 by NXP Semiconductors

BB182,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;
934055676115 by NXP Semiconductors

934055676115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBV2108LT1 by Onsemi

MMBV2108LT1

Onsemi

MMBV2108LT1 by Onsemi is a varactor diode with a min quality factor of 300, nominal capacitance of 27 pF, and max power dissipation of 0.225 W. It is designed for high frequency to ultra high frequency applications due to its abrupt variable capacitance diode classification. The diode has a small outline package style with gull wing terminals and operates at a min breakdown voltage of 30 V.
MDX599M by Texas Instruments

MDX599M

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 30; Maximum Repetitive Peak Reverse Voltage: 6 V;
BB804G215 by NXP Semiconductors

BB804G215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB809-TAPE-REEL by NXP Semiconductors

BB809-TAPE-REEL

NXP Semiconductors

BB809-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated case ensures reliability.
934050190335 by NXP Semiconductors

934050190335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBV3102LT1 by Onsemi

MMBV3102LT1

Onsemi

MMBV3102LT1 by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 22 pF, and max power dissipation of 0.225 W. It is designed for very high frequency applications requiring hyperabrupt variable capacitance diodes in small outline packages.