Secos - BC857C

  1. Home
  2. Secos - BC857C
BC857C by Secos

Image shown is a representation only.

Manufacturer Secos
Manufacturer's Part Number BC857C
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
Datasheet BC857C Datasheet
In Stock32,563
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 420
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .3 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
32,563 - -

Popular Products

Category Top Products

BC548 by Infineon Technologies

BC548

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC327-25 by Vishay Intertechnology

BC327-25

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 160;
TIP42C by Jiangsu Changjiang Electronics Technology

TIP42C

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 6 A;
BD139-10 by Motorola

BD139-10

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP142T by Inchange Semiconductor

TIP142T

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 1000;
TIP41C by Asi Semiconductor

TIP41C

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD13910 by Jiangsu Changjiang Electronics Technology

BD13910

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 150 Cel;
BD138 by Shanghai Lunsure Electronic Technology

BD138

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N2907A by Micropac Industries

2N2907A

Micropac Industries

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC547C by Synsemi

BC547C

Synsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2219A by Transistor & Electronic

2N2219A

Transistor & Electronic

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N3904 by Semiconductors

2N3904

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC856B by Shanghai Lunsure Electronic Technology

BC856B

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
FDV302P-NB8V001 by Fairchild Semiconductor

FDV302P-NB8V001

Fairchild Semiconductor

FDV302P-NB8V001 by Fairchild Semiconductor is a P-CHANNEL FET with 0.12A max drain current and 0.35W max power dissipation. It operates in enhancement mode, suitable for surface mount applications up to 150°C. Ideal for low-power circuit designs requiring single configuration transistors.
BC857B by North American Philips Discrete Products Div

BC857B

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC327-25 by Bharat Electronics

BC327-25

Bharat Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
BDX53C by Inchange Semiconductor

BDX53C

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
BD138 by Tt Electronics Plc

BD138

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP29C by Jiangsu Changjiang Electronics Technology

TIP29C

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
IRF640 by Weitron Technology

IRF640

Weitron Technology

Other Transistors;