Semicoa - JANTX2N6796

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JANTX2N6796 by Semicoa

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Manufacturer Semicoa
Manufacturer's Part Number JANTX2N6796
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Reference Standard: MIL-19500; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;
Datasheet JANTX2N6796 Datasheet
In Stock21,869
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 75 mJ
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 8 A
JEDEC-95 Code: TO-205AF
Maximum Pulsed Drain Current (IDM): 32 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Reference Standard: MIL-19500
Maximum Drain-Source On Resistance: .195 ohm
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