Semiconductors - BC138

  1. Home
  2. Semiconductors - BC138
BC138 by Semiconductors

Image shown is a representation only.

Manufacturer Semiconductors
Manufacturer's Part Number BC138
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Operating Temperature: 175 Cel;
Datasheet BC138 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 40 MHz
Maximum Power Dissipation (Abs): .8 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 100
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBT2222A by Minilogic Device

MMBT2222A

Minilogic Device

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .325 W; Maximum Collector Current (IC): .001 A;
2N2222AUBC by Microsemi

2N2222AUBC

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
BC547B by STMicroelectronics

BC547B

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
JANTX2N2222AUA by Micropac Industries

JANTX2N2222AUA

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Terminal Form: NO LEAD; Transistor Element Material: SILICON;
2N2222AUB by Microsemi

2N2222AUB

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns;
JANTX2N2222A by Silicon Transistor

JANTX2N2222A

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC846-B by Infineon Technologies

BC846-B

Infineon Technologies

BC846-B by Infineon Technologies is a NPN BJT transistor with 200 min hFE, suitable for amplifier applications. It has a max collector-emitter voltage of 65V and can handle up to 0.1A of collector current. With a transition frequency of 250MHz, it comes in a small outline package ideal for surface mount assembly.
2N2222A by Minilogic Device

2N2222A

Minilogic Device

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
BC817-40QAZ by NXP Semiconductors

BC817-40QAZ

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
2N3904 by Surge Components

2N3904

Surge Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;
BC847BS,115 by NXP Semiconductors

BC847BS,115

NXP Semiconductors

BC847BS,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements. It has a min DC current gain of 200 and can handle a max collector-emitter voltage of 45V. Ideal for switching applications, this surface-mount transistor operates at up to 150°C and has a peak reflow temperature of 260°C.
FMMT458TA by Diodes Incorporated

FMMT458TA

Diodes Incorporated

FMMT458TA by Diodes Inc. is a NPN BJT transistor with 100 min hFE, 400V VCEO, and 50MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150°C, it has a max power dissipation of 0.5W.
2N2907A by Motorola

2N2907A

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Power Dissipation Ambient: 1.2 W;
2N3906 by Solid State Devices

2N3906

Solid State Devices

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V; No. of Elements: 1;
2N3906 by Toshiba

2N3906

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3904 by Bytesonic Electronics

2N3904

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
BC847C by Lite-on Semiconductor

BC847C

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
2N2905A by Solid State Devices

2N2905A

Solid State Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N2222A by Loras Industries

2N2222A

Loras Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547B by Itt Semiconductor

BC547B

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;