Semikron International - SKM200GARL066T

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SKM200GARL066T by Semikron International

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Manufacturer Semikron International
Manufacturer's Part Number SKM200GARL066T
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 280 A; No. of Terminals: 9; Maximum VCEsat: 1.9 V;
Datasheet SKM200GARL066T Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 280 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 9
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X9
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.9 V
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