Shanghai Lunsure Electronic Technology - MMBT2222A

  1. Home
  2. Shanghai Lunsure Electronic Technology - MMBT2222A
MMBT2222A by Shanghai Lunsure Electronic Technology

Image shown is a representation only.

Manufacturer Shanghai Lunsure Electronic Technology
Manufacturer's Part Number MMBT2222A
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; JESD-30 Code: R-PDSO-G3;
Datasheet MMBT2222A Datasheet
In Stock362,402
NAME DESCRIPTION
Nominal Transition Frequency (fT): 300 MHz
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Maximum Turn On Time (ton): 35 ns
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 40
No. of Terminals: 3
Maximum Power Dissipation (Abs): .35 W
Maximum Collector-Emitter Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 285 ns
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Collector-Base Capacitance: 8 pF
Maximum VCEsat: 1 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
362,402 - -

Popular Products

Category Top Products

BC846B by Promax-johnton

BC846B

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Terminal Form: GULL WING;
2N2219A by Continental Device India

2N2219A

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT3904 by Shanghai Lunsure Electronic Technology

MMBT3904

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Package Body Material: PLASTIC/EPOXY;
2N2219A by General Transistor

2N2219A

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222AUB by Cobham Plc

JANTX2N2222AUB

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Maximum Collector-Emitter Voltage: 50 V; No. of Elements: 1;
NSM4002MR6T1G by Onsemi

NSM4002MR6T1G

Onsemi

NSM4002MR6T1G by Onsemi is a NPN BJT with hFE of 100, IC of 0.5A, and fT of 100MHz. Ideal for surface mount applications in electronics requiring high-speed signal amplification up to 150°C.
2N2905A by Solid State Devices

2N2905A

Solid State Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC817-25 by Continental Device India

BC817-25

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
BC547C by Rectron

BC547C

Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: BOTTOM;
BC847C by Nexperia

BC847C

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
MMBT2907A by Samsung

MMBT2907A

Samsung

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
2N2905A by Vishay Intertechnology

2N2905A

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Terminal Position: BOTTOM; No. of Elements: 1;
2N3906 by Surge Components

2N3906

Surge Components

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): CYLINDRICAL;
SMMBT2907ALT3G by Onsemi

SMMBT2907ALT3G

Onsemi

SMMBT2907ALT3G by Onsemi is a PNP BJT with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for small outline applications requiring high DC current gain and fast turn-on/off times. Suitable for automotive electronics due to AEC-Q101 compliance and peak reflow temperature of 260°C.
MMBT3906TT1G by Onsemi

MMBT3906TT1G

Onsemi

MMBT3906TT1G by Onsemi is a PNP small signal BJT transistor with a max collector-emitter voltage of 40V. It has a min DC current gain of 30 and can handle a max collector current of 0.2A. This transistor is commonly used in amplifier applications due to its high transition frequency of 250MHz.
2N3904 by Vishay Semiconductors

2N3904

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Shape: ROUND;
BC847C by Weitron Technology

BC847C

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-25 by ROHM

BC817-25

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
SMMBT4403LT1G by Onsemi

SMMBT4403LT1G

Onsemi

SMMBT4403LT1G by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.75V, hFE of 100, and IC of 0.6A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds up to 200MHz.
2N2219A by Crimson Semiconductor

2N2219A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;