Sharp Corporation - PT481E00000F

  1. Home
  2. Sharp Corporation - PT481E00000F
PT481E00000F by Sharp Corporation

Image shown is a representation only.

Manufacturer Sharp Corporation
Manufacturer's Part Number PT481E00000F
Description PHOTO DARLINGTON; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu); Nominal Light Current: 10 mA; JESD-609 Code: e1; Configuration: SINGLE; Peak Wavelength (nm): 800;
Datasheet PT481E00000F Datasheet
NAME DESCRIPTION
Maximum Dark Current: 1000 nA
Shape: ROUND
Configuration: SINGLE
Size: 1.6 mm
Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
JESD-609 Code: e1
Minimum Operating Temperature: -25 Cel
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO DARLINGTON
Nominal Light Current: 10 mA
Peak Wavelength (nm): 800
Additional Features: SIDE VIEW
Maximum Operating Temperature: 85 Cel
Minimum Collector-emitter Breakdown Voltage: 35 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TPS606(LB)-B by Toshiba

TPS606(LB)-B

Toshiba

PHOTO TRANSISTOR; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .01 mA; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 20 V;
SD2440-003 by Micro Switch

SD2440-003

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W;
HST9-B170 by Broadcom

HST9-B170

Broadcom

PHOTO TRANSISTOR;
SFH310FA-3 by Infineon Technologies

SFH310FA-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Peak Wavelength (nm): 880; Maximum Response Time: .000008 s;
3037 by Nte Electronics

3037

Nte Electronics

The Nte Electronics 3037 is a single phototransistor with a size of 4.69 mm, ideal for light sensing applications. It has a nominal light current of 10 mA and max dark current of 200 nA, making it suitable for use in various optoelectronic circuits requiring precise light detection.
HST9-B680 by Broadcom

HST9-B680

Broadcom

PHOTO TRANSISTOR;
QSD724 by Onsemi

QSD724

Onsemi

The Onsemi QSD724 is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W and response time of 0.00001s. Ideal for IR applications, it has a collector-emitter breakdown voltage of 30V and nominal light current of 3.5mA.
QSE133 by Onsemi

QSE133

Onsemi

QSE133 by Onsemi is a single phototransistor with peak wavelength of 880nm. It has a max operating temp of 100 °C and min of -40°C. Ideal for optoelectronic applications requiring fast response time, with nominal light current of 9mA and dark current less than 100nA.
TEPT5700 by Vishay Intertechnology

TEPT5700

Vishay Intertechnology

TEPT5700 by Vishay Intertechnology is a 5.1mm round phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, has max power dissipation of 0.1W, and nominal light current of 0.075mA. Ideal for optoelectronic applications requiring through hole mounting and low dark current sensitivity.
TIL406 by Texas Instruments

TIL406

Texas Instruments

TIL406 by Texas Instruments is a phototransistor with max temp of 125°C and min temp of -60°C. It has a max power dissipation of 0.05W, dark current of 25nA, and response time of 8µs. Ideal for applications requiring through hole mounting in various light sensing systems.
SFH314-3 by Infineon Technologies

SFH314-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .05 A; Minimum Operating Temperature: -55 Cel;
QSE114 by Qt Optoelectronics

QSE114

Qt Optoelectronics

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Size: .062 mm; Maximum Power Dissipation: .1 W;
QSE113 by Onsemi

QSE113

Onsemi

QSE113 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time and collector-emitter breakdown voltage of 30V.
PT12-21C/TR8 by Everlight Electronics

PT12-21C/TR8

Everlight Electronics

Everlight Electronics' PT12-21C/TR8 is a 2mm single phototransistor with peak wavelength of 940nm. Operating temperature ranges from -25°C to 85°C. Ideal for applications requiring infrared detection and collector-emitter breakdown voltage of 30V.
SFH313FA-2 by Infineon Technologies

SFH313FA-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 870; Maximum Operating Temperature: 100 Cel;
OP804SL by Optek Technology

OP804SL

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: YES; Size: 4.65 mm; Maximum On State Current: .05 A; Minimum Collector-emitter Breakdown Voltage: 30 V;
SFH313FA by Infineon Technologies

SFH313FA

Infineon Technologies

SFH313FA by Infineon Technologies is a phototransistor with peak wavelength of 870nm. It operates b/w -55°C to 100°C, with max dark current of 200nA and on state current of 0.05A. Ideal for applications requiring through hole mounting such as light sensing in industrial automation and automotive systems.
SFH309FA-4/5 by Osram Opto Semiconductors

SFH309FA-4/5

Osram Opto Semiconductors

Osram Opto Semiconductors SFH309FA-4/5 is a single phototransistor with peak wavelength of 900nm. It operates b/w -40 to 100°C, has a max power dissipation of 0.165W, and min collector-emitter breakdown voltage of 35V. Ideal for applications requiring infrared detection and light current up to 1mA.
QSD722 by Onsemi

QSD722

Onsemi

QSD722 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time of 6μs and collector-emitter breakdown voltage of 30V.
TPS608A-A by Toshiba

TPS608A-A

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -25 Cel; Configuration: SINGLE; Maximum Operating Temperature: 85 Cel; Size: 1.5 mm; Peak Wavelength (nm): 820;