SI4730 by Silicon Labs | General Purpose ICs

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Manufacturer	Silicon Labs
Manufacturer's Part Number	SI4730
Description	AUDIO SINGLE CHIP RECEIVER; Terminal Form: NO LEAD; No. of Terminals: 20; Package Code: HVQCCN; Package Shape: SQUARE; Package Body Material: UNSPECIFIED;
Datasheet	SI4730 Datasheet
In Stock	25

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Seated Height:	.6 mm
Minimum Supply Voltage (Vsup):	2.7 V
Surface Mount:	YES
Harmonic Distortion:	.1 %
No. of Functions:	1
No. of Terminals:	20
Qualification:	Not Qualified
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
Length:	3 mm
Technology:	CMOS
JESD-30 Code:	S-XQCC-N20
Package Shape:	SQUARE
Nominal Output Voltage (AM):	60 mV
Terminal Form:	NO LEAD
Package Code:	HVQCCN
General IC Type:	AUDIO SINGLE CHIP RECEIVER
Demodulation Type:	AM/FM
Nominal Signal to Noise Ratio (FM):	63 dB
Width:	3 mm
Nominal Output Voltage (FM):	80 mV
Terminal Pitch:	.5 mm
Maximum Supply Voltage (Vsup):	5.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
25	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;

The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;

IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;