Sirenza Microdevices - SPF-5122Z

MAAP-010168-000000 by M/a-com Technology Solutions is a wide band high power RF module with 19 dB gain, operating from 500 MHz to 3000 MHz. It can handle up to 24 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & Microwave applications requiring high power amplification.

SPF-5043Z by Sirenza Microdevices is a 50 ohm wide band low power RF amplifier with gain of 6.7 dB. It operates b/w 100 MHz to 4000 MHz, handling up to 25 dBm CW input power. Ideal for RF & microwave applications, it can withstand temperatures from -40°C to 85°C.

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;

NXP Semiconductors' MW7IC2040NR1 is a MOS RF amplifier with 29.5 dB gain, operating from 1805-1990 MHz. It handles up to 25 dBm CW input power, with VSWR of 5 and characteristic impedance of 50 ohm. Ideal for narrowband high-power applications in RF and microwave systems.

XP1044-QL-0N00 by M/a-com Technology Solutions is a RF & Microwave Amplifier with 16.5 dB Gain, 23 dBm Max Input Power (CW), and operates b/w 3500-6000 MHz. Ideal for narrow band medium power applications due to its COMPONENT construction and Matte Tin (Sn) terminal finish.

WIDE BAND LOW POWER; Maximum Operating Frequency: 20000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 6000 MHz; Construction: COMPONENT; Gain: 18 dB;

Analog Devices' HMC606LC5TR-R5 is a wide band low power RF amplifier with 9.5 dB gain, suitable for frequencies ranging from 2-18 GHz. It can handle up to 15 dBm CW input power and operates in temperatures from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact component design.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 6;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -25 Cel;

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.

CC2590RGVRG4 by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and is ideal for narrowband low-power applications in temperatures ranging from -40 to 85°C.

Broadcom's MGA-86576-TR1G is a wide band low power RF amplifier with 20 dB gain, operating from 1500 to 8000 MHz. It has a max input power of 13 dBm and VSWR of 2.5, suitable for various RF & microwave applications requiring high performance in a compact form factor.

Broadcom's MGA-86576-TR1 is a GAAS RF amplifier with 20dB gain, operating from 1500MHz to 8000MHz. It has a max input power of 13dBm and VSWR of 2.5, suitable for wideband low-power applications in RF & microwave systems. The component features surface mounting and requires a 5V power supply with a max current draw of 22mA.

HMC311SC70E by Analog Devices is a GAAS RF amplifier with 11 dB gain, operating from 0 to 8000 MHz. It has a max input power of 10 dBm and operates on a 5V supply with a current draw of 74 mA. Ideal for wideband low-power applications requiring surface mount installation in temperatures ranging from -40 to 85°C.

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;