Sk Hynix - HMAA8GR7AJR4N-XN

  1. Home
  2. Sk Hynix - HMAA8GR7AJR4N-XN
HMAA8GR7AJR4N-XN by Sk Hynix

Image shown is a representation only.

Manufacturer Sk Hynix
Manufacturer's Part Number HMAA8GR7AJR4N-XN
Description DDR4 DRAM MODULE;
Datasheet HMAA8GR7AJR4N-XN Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IS46TR16256BL-125KBLA2 by Integrated Silicon Solution

IS46TR16256BL-125KBLA2

Integrated Silicon Solution

IS46TR16256BL-125KBLA2 by Integrated Silicon Solution is a DDR3 DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 4294967296 bits. Ideal for industrial applications requiring multi-bank page burst access mode and a temperature range from -40 to 105°C.
KMM591000B-8 by Samsung

KMM591000B-8

Samsung

Samsung's KMM591000B-8 is a 1MX9 DRAM module with 1048576 words, 9437184 bit memory density, and 80 ns max access time. It operates in fast page access mode at a nominal voltage of 5V. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
MT40A256M16GE-083EAUT:BTR by Micron Technology

MT40A256M16GE-083EAUT:BTR

Micron Technology

Micron Technology's MT40A256M16GE-083EAUT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features common I/O type, self-refresh mode, and operates in synchronous mode. Ideal for applications requiring high-speed memory access and low power consumption in automotive electronics.
MT46H64M32LFBQ-48IT:C by Micron Technology

MT46H64M32LFBQ-48IT:C

Micron Technology

Micron Technology's MT46H64M32LFBQ-48IT:C is a 64MX32 LPDDR1 DRAM with 67108864 words, operating at 208 MHz. It features a very thin profile, fine pitch grid array package and supports synchronous operation with self-refresh capability. Ideal for industrial applications requiring fast memory access and low power consumption.
KVR16LN11/4 by Kingston Technology Company

KVR16LN11/4

Kingston Technology Company

Kingston's KVR16LN11/4 DDR DRAM module operates synchronously at 1.35V, with 512MX64 organization and 64-bit memory width. Ideal for applications requiring high memory density and multi-bank page burst access mode in microelectronic assemblies.
MT4C4001JDJ-6 by Micron Technology

MT4C4001JDJ-6

Micron Technology

Micron Technology's MT4C4001JDJ-6 is a 1MX4 DRAM with 1048576 words, 60ns access time, and 4194304-bit memory density. It is used in fast page applications requiring common I/O type and operates at a nominal voltage of 5V.
AS4C512M16D3LB-12BINTR by Alliance Memory

AS4C512M16D3LB-12BINTR

Alliance Memory

Alliance Memory's AS4C512M16D3LB-12BINTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in a compact grid array package.
MT48LC8M16A2P-6AIT:L by Micron Technology

MT48LC8M16A2P-6AIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6AIT:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features self-refresh capability, common I/O type, and supports four-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast access times.
KM44C1000BT-7 by Samsung

KM44C1000BT-7

Samsung

Samsung's KM44C1000BT-7 is a 1MX4 DRAM with 70ns access time, operating at 5V. It features 3-STATE output and fast page access mode, suitable for commercial applications requiring high memory density and low standby current. The package is small outline with dual terminal position, making it ideal for space-constrained designs.
MT40A1G8WE-083EIT:B by Micron Technology

MT40A1G8WE-083EIT:B

Micron Technology

Micron Technology's MT40A1G8WE-083EIT:B is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access speeds.
IS43DR16640B-25DBLI by Integrated Silicon Solution

IS43DR16640B-25DBLI

Integrated Silicon Solution

IS43DR16640B-25DBLI by Integrated Silicon Solution is a 64MX16 DDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 1073741824 bit. This DRAM is commonly used in industrial applications that require high-speed data storage and retrieval.
MT41J256M16HA-125:E by Micron Technology

MT41J256M16HA-125:E

Micron Technology

Micron Technology's MT41J256M16HA-125:E is a DDR3 DRAM with 256MX16 organization, operating at 800 MHz. It features a thin profile grid array package and synchronous operation mode. Ideal for applications requiring high-speed memory access in devices like servers and networking equipment.
IS42S32400F-7TLI by Integrated Silicon Solution

IS42S32400F-7TLI

Integrated Silicon Solution

IS42S32400F-7TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. Ideal for industrial applications, it features common I/O type, self-refresh mode, and supports four-bank page burst access mode.
MT41K256M16TW-107:P by Micron Technology

MT41K256M16TW-107:P

Micron Technology

Micron Technology's MT41K256M16TW-107:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in devices like computers and servers.
MT48LC4M32B2F5-7IT:G by Micron Technology

MT48LC4M32B2F5-7IT:G

Micron Technology

Micron Technology's MT48LC4M32B2F5-7IT:G is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access time, such as networking equipment and industrial automation systems.
AS4C512M16D3L-12BIN by Alliance Memory

AS4C512M16D3L-12BIN

Alliance Memory

Alliance Memory's AS4C512M16D3L-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, operating at 1.35V. It features multi-bank page burst access mode and offers 8192 refresh cycles. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
S70KS1282GABHI020 by Infineon Technologies

S70KS1282GABHI020

Infineon Technologies

Infineon's S70KS1282GABHI020 is a 16MX8 DRAM with 200 MHz clock frequency, 1.8V supply voltage, and 85°C operating temp. Ideal for applications requiring high-speed synchronous memory in compact devices due to its very thin profile grid array package style.
MT46H64M16LFBF-5AIT:B by Micron Technology

MT46H64M16LFBF-5AIT:B

Micron Technology

Micron Technology's MT46H64M16LFBF-5AIT:B is a 64MX16 DDR1 DRAM with 67108864 words. It operates at 200 MHz, has a memory density of 1073741824 bit, and supports a max clock frequency of 200 MHz. Ideal for industrial applications requiring fast data access and high memory capacity.
K4S561632E-TC75T00 by Samsung

K4S561632E-TC75T00

Samsung

Samsung's K4S561632E-TC75T00 is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.
MT41K512M8DA-107IT:P by Micron Technology

MT41K512M8DA-107IT:P

Micron Technology

MT41K512M8DA-107IT:P by Micron Technology is a DDR3L DRAM with 512Mx8 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast access times in a compact form factor.