STMicroelectronics - 2N37000UBSW

  1. Home
  2. STMicroelectronics - 2N37000UBSW
2N37000UBSW by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number 2N37000UBSW
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1 A; Package Style (Meter): SMALL OUTLINE;
Datasheet 2N37000UBSW Datasheet
In Stock3,511
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 50
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .5 W
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 200 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,511 - -

Popular Products

Category Top Products

2N2222A by Allegro MicroSystems

2N2222A

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847B by Unisonic Technologies

BC847B

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
BC846BW,115 by NXP Semiconductors

BC846BW,115

NXP Semiconductors

BC846BW,115 by NXP Semiconductors is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its low VCEsat of 0.6V and high DC current gain (hFE) of 200.
2N3906 by Onsemi

2N3906

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Secos

MMBT2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC817-25 by Weitronic Enterprise

BC817-25

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC817-25 by General Semiconductor

BC817-25

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
2N2222A by Raytheon Semiconductor

2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;
BC847B,215 by NXP Semiconductors

BC847B,215

NXP Semiconductors

NXP Semiconductors' BC847B,215 is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V, hFE of 200, and can handle a max IC of 0.1A. With a package style of small outline and peak reflow temperature of 260°C, it's ideal for compact electronic devices requiring high-speed switching capabilities.
BC847-C by Infineon Technologies

BC847-C

Infineon Technologies

BC847-C by Infineon Technologies is a NPN BJT transistor with hFE of 420, fT of 250 MHz, and IC of 0.1 A. It is used in amplifier applications due to its max VCE of 45V and operating temp of 150°C. This surface-mount transistor has a Gull Wing terminal form in a small outline package.
BC846B by Siemens

BC846B

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC547B by Synsemi

BC547B

Synsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N3904 by National Semiconductor

2N3904

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3904LT1G by Onsemi

MMBT3904LT1G

Onsemi

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
SBC846BWT1G by Onsemi

SBC846BWT1G

Onsemi

The Onsemi SBC846BWT1G is a NPN BJT with max power dissipation of 0.15W, hFE of 200, and fT of 100MHz. Ideal for small signal applications in electronics due to its single configuration, surface mount capability, and max collector current of 0.1A.
2N2222AUA by Microchip Technology

2N2222AUA

Microchip Technology

2N2222AUA by Microchip is a NPN transistor with max. collector-emitter voltage of 50V and max. collector current of 0.8A. It has a min. DC current gain of 30, ideal for switching applications with a max. power dissipation of 0.65W in surface mount package style suitable for small outline designs.
MMBT3906 by Microchip Technology

MMBT3906

Microchip Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;
2N2222A by Cobham Plc

2N2222A

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;
BC847C,235 by Nexperia

BC847C,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
MMBT3904 by Yangzhou Yangjie Electronics

MMBT3904

Yangzhou Yangjie Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Moisture Sensitivity Level (MSL): 1;