STMicroelectronics - 2N3700UB07SW

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2N3700UB07SW by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number 2N3700UB07SW
Description Small Signal Bipolar Transistors;
Datasheet 2N3700UB07SW Datasheet
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MMBT2222A by Weitronic Enterprise

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
MMBT2907A by Panjit International

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MMBT3904 by General Semiconductor

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BC847B by General Semiconductor

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2219A by M/a-com Technology Solutions

2N2219A

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Transistor Element Material: SILICON;
BC817-25W,115 by NXP Semiconductors

BC817-25W,115

NXP Semiconductors

NXP Semiconductors' BC817-25W,115 is a NPN BJT transistor with VCEsat of 0.7V and hFE of 160. Ideal for switching applications, it has a max IC of 0.5A and operates up to 150°C. With a compact small outline package, it features GULL WING terminals for surface mount assembly.
2N3906 by Secos

2N3906

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;
BC846B,215 by Nexperia

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Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;
BC847B by ROHM

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ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by Motorola

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Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 35 ns;
2N2222A by Loras Industries

2N2222A

Loras Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2222A by Onsemi

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Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
2N2907A by ROHM

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MMBTA06LT1G by Onsemi

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Onsemi

MMBTA06LT1G by Onsemi is a NPN BJT transistor with 100 min hFE, 80V VCEO, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating temperature ranges from -55 to 150°C.
JANTX2N2222AUA/TR by Microchip Technology

JANTX2N2222AUA/TR

Microchip Technology

JANTX2N2222AUA/TR by Microchip is a NPN BJT transistor with hFE of 30, Vce of 50V, and Ic of 0.8A. Ideal for switching applications due to its fast ton of 35ns and toff of 300ns. It comes in a small outline package suitable for surface mount technology.
2N2219A by Silicon Transistor

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC817-40,215 by NXP Semiconductors

BC817-40,215

NXP Semiconductors

NXP Semiconductors' BC817-40,215 is a NPN BJT transistor with VCEsat of 0.7V and hFE of 250. Ideal for switching applications, it has a max IC of 0.5A and operates up to 150°C. The GULL WING terminal form and small outline package make it suitable for surface mount designs.
MMBT2907AWT1G by Onsemi

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Onsemi

MMBT2907AWT1G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.15W, and max. collector-emitter voltage of 60V. Ideal for amplifier applications, it has a min. DC current gain of 50 and operates at up to 150°C, making it suitable for various electronic circuits.
2N2222A by Dionics-usa

2N2222A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2907A by Jiangsu Changjiang Electronics Technology

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Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;