2N3700UBT by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	2N3700UBT
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .76 W; Maximum Collector Current (IC): 1 A; Minimum Operating Temperature: -65 Cel;
Datasheet	2N3700UBT Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	50
Minimum Operating Temperature:	-65 Cel
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.76 W
Maximum Collector-Emitter Voltage:	80 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-XDSO-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Maximum Operating Temperature:	200 Cel
Maximum Collector-Base Capacitance:	12 pF
Reference Standard:	ESA/SCC 5201/004
Maximum VCEsat:	.5 V
Maximum Power Dissipation Ambient:	.5 W

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