STMicroelectronics - 2N5153SHRG

  1. Home
  2. STMicroelectronics - 2N5153SHRG
2N5153SHRG by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number 2N5153SHRG
Description Power Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet 2N5153SHRG Datasheet
In Stock4,163
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,163 - -

Popular Products

Category Top Products

TIP120 by Crimson Semiconductor

TIP120

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR;
JANTXV2N3055 by New England Semiconductor

JANTXV2N3055

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG; Qualification: Not Qualified;
TIP112G by Onsemi

TIP112G

Onsemi

TIP112G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 50W and can handle a max collector-emitter voltage of 100V. This transistor is commonly used in amplifier applications due to its high DC current gain (hFE) of 500 and nominal transition frequency (fT) of 25MHz.
D44H11 by National Semiconductor

D44H11

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
SBCP56T1G by Onsemi

SBCP56T1G

Onsemi

SBCP56T1G by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 1.5W and hFE of 40, it operates up to 150°C making it suitable for various electronic designs.
ULN2002AN by Texas Instruments

ULN2002AN

Texas Instruments

ULN2002AN by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and silicon element material.
BDW93C by Samsung

BDW93C

Samsung

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY;
TIP41C by Secos

TIP41C

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP115 by Transys Electronics

TIP115

Transys Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;
2N3055H by Digitron Semiconductors

2N3055H

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP127G by Changzhou Galaxy Century Microelectronics

TIP127G

Changzhou Galaxy Century Microelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
TIP41C by Texas Instruments

TIP41C

Texas Instruments

TIP41C by Texas Instruments is a NPN BJT transistor with 100V VCE, 6A IC, and 65W Ptot. Ideal for switching applications due to its single configuration and high power dissipation capability. Its silicon material and 3MHz fT make it suitable for various electronic designs.
TIP122 by Baneasa S A

TIP122

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
BD679 by Continental Device India

BD679

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP120 by Transys Electronics

TIP120

Transys Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum Operating Temperature: -65 Cel;
TIP42C by Samsung

TIP42C

Samsung

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP147T by Baneasa S A

TIP147T

Baneasa S A

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Terminals: 3; Terminal Position: SINGLE;
TIP120 by General Transistor

TIP120

General Transistor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
D44H8 by Fairchild Semiconductor

D44H8

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A;
BD140 by Continental Device India

BD140

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;