STMicroelectronics - 2N5153SHRT

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 117 W; Maximum Collector Current (IC): 15 A; Transistor Application: SWITCHING;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30; Terminal Form: GULL WING;

NPN; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Maximum Collector-Emitter Voltage: 80 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;

NJVMJD45H11T4G by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it operates b/w -55 to 150°C. Its small outline package and high transition frequency of 90MHz make it suitable for various electronic designs.

TIP120TU by Onsemi is a NPN power BJT with 65W max power dissipation, ideal for switching applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 1000 and can handle up to 5A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 60V, this transistor is designed for high-power tasks in various electronic circuits.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; Terminal Finish: TIN LEAD; JESD-609 Code: e0;

Vishay Intertechnology's ULN2804A is an 8-bank Darlington transistor array with built-in diode and resistor, ideal for switching applications. Featuring a max collector-emitter voltage of 50V and a max collector current of 0.5A, this NPN transistor in a rectangular package with through-hole terminals offers reliable performance.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Terminal Finish: MATTE TIN; Maximum Collector-Emitter Voltage: 60 V;

JANTXV2N3055 by Microchip Tech is a NPN BJT with 115W power dissipation, 70V max collector-emitter voltage, and 15A max collector current. Ideal for high-power applications in military electronics due to MIL-19500/407D standard compliance and flange mount package style.

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSFM-T3;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500; Maximum Collector-Emitter Voltage: 100 V;